FDS2572 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* RDS(on) = 0.040 mW (Typ.), VGS = 10 V
* Qg(TOT) = 29 nC (Typ.), VGS = 10 V
* Low QRR Body Diode
* Maximized Efficiency at High Frequencies
* UIS Rat.

Application

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC−DC conv.

Description

UltraFET Devices Combine Characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC−DC converters. Features
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